microwave corporation 5 - 76 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com mixers - chip 5 HMC294 v01.0300 general description features functional diagram input ip3: +20 dbm lo / rf isolation: 27 db passive: no dc bias required small size: 0.88 mm x 1.93 mm electrical speci cations, t a = +25?c, lo drive = +14 dbm typical applications the HMC294 is ideal for: microwave pt to pt radios lmds satcom the HMC294 chip is a miniature passive gaas mmic double-balanced mixer which can be used as an upconverter or downconverter from 25 - 40 ghz in a small chip area of 1.70 mm 2 . excellent isolations are provided by on-chip baluns, which require no external components and no dc bias. all data is measured with the chip in a 50 ohm test ? xture connected via 0.076 mm (3 mil) gold ribbon of minimal length <0.31 mm (<12 mils). gaas mmic double-balanced mixer, 25 - 40 ghz parameter min. typ. max. units frequency range, rf & lo 25 - 40 ghz frequency range, if dc - 2 ghz conversion loss 10 13 db noise figure (ssb) 10 13 db lo to rf isolation 22 27 db lo to if isolation 31 38 db rf to if isolation 27 33 db ip3 (input) 15 20 dbm ip2 (input) 24 35 dbm 1 db gain compression (input) 9 12 dbm
microwave corporation 5 - 77 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com mixers - chip 5 v01.0300 -20 -15 -10 -5 0 20 25 30 35 40 conversion gain (db) frequency (ghz) +85 c -55 c +25 c -50 -40 -30 -20 -10 0 20 25 30 35 40 isolation (db) frequency (ghz) rf/if lo/rf lo/if conversion gain vs. temperature @ lo = +14 dbm HMC294 -20 -15 -10 -5 0 20 25 30 35 40 conversion gain (db) frequency (ghz) +14 dbm +8 dbm +16 dbm +12 dbm +10 dbm -20 -15 -10 -5 0 02468 if conversion gain (db) and return loss (db) if frequency (ghz) if return loss if conversion gain -15 -10 -5 0 20 25 30 35 40 return loss (db) frequency (ghz) lo rf -20 -15 -10 -5 0 20 25 30 35 40 conversion gain (db) frequency (ghz) isolation @ lo = +14 dbm conversion gain vs. lo drive return loss @ lo = +14 dbm if bandwidth @ lo = +14 dbm upconverter performance conversion gain @ lo = +14 dbm gaas mmic double-balanced mixer, 25 - 40 ghz
microwave corporation 5 - 78 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com mixers - chip 5 v01.0300 HMC294 5 10 15 20 25 30 20 25 30 35 40 input ip3 (dbm) frequency (ghz) +12 dbm +10 dbm +8 dbm +14 dbm 5 10 15 20 25 30 20 25 30 35 40 input ip3 (dbm) frequency (ghz) -55c +85c +25c input ip3 vs. lo drive input ip3 vs. temperature @ lo = +14 dbm input ip2 vs. lo drive 0 10 20 30 40 50 20 25 30 35 40 input ip2 (dbm) frequency (ghz) +12 dbm +10 dbm +8 dbm +14 dbm input ip2 vs. temperature @ lo = +14 dbm mxn spurious outputs 0 10 20 30 40 50 20 25 30 35 40 input ip2 (dbm) frequency (ghz) -55c +85c +25c input p1db vs. temperature @ lo = +14 dbm 6 8 10 12 14 16 20 25 30 35 40 input p1db frequency (ghz) -55 c +25 c +85 c gaas mmic double-balanced mixer, 25 - 40 ghz nlo mrf 0 1 2 3 4 0 xx 3.9 125047 2 915986 3 >110 68 105 4 >110 106 rf = 35 ghz @ -10 dbm lo = 34 ghz @ +14 dbm all values in dbc below the if power level.
microwave corporation 5 - 79 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com mixers - chip 5 v01.0300 HMC294 outline drawing absolute maximum ratings gaas mmic double-balanced mixer, 25 - 40 ghz rf / if input +13 dbm lo drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +125 c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004?. 3. typical bond pad is .004? square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads.
microwave corporation 5 - 80 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com mixers - chip 5 HMC294 v01.0300 mic assembly techniques mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounti ng, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ? lm substrates are recommended for bringing rf to a nd from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin ? lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach th e 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figur e 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to- substrate spacing is 0.076mm (3 mils). gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) and minimal length <0.31 mm (<12 mils) is r ecom- mended to minimize inductance on the rf ports. r i b b o n b o n d r i b b o n b o n d gaas mmic double-balanced mixer, 25 - 40 ghz
microwave corporation 5 - 81 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com mixers - chip 5 gaas mmic sub-harmonically pumped mixer 17 - 25 ghz HMC294 v01.0300 gaas mmic double-balanced mixer, 25 - 40 ghz handling precautions follow these precautions to avoid permanent damage. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ? ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the moun ting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ? llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer?s schedule. wire bonding ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage tem- perature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ulrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils).
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